Plasma Etching Machine Structure

Midziyo yeICP inonyanya kuve nezvikamu zvina: pre-vacuum chamber, etching chamber, gas supply system uye vacuum system.

(1) Pre{1}}vacuum chamber

Basa rekutanga-vacuum chamber nderokuona kuti etching chamber yakachengetedzwa padanho revacuum, haikanganisirwe nemamiriro ekunze (seguruva, mhute yemvura), uye inobvisa magasi ane ngozi kubva muimba yakachena. Iyo ine chivharo, manipulator, nzira yekufambisa, gonhi rekuzviparadzanisa nevamwe, nezvimwe.

(2) Etching room

Iyo etching kamuri ndiyo yakakosha chimiro cheICP etching michina. Iyo ine mhedzisiro yakananga pane etching rate, verticality ye etching, uye roughness. Izvo zvakakosha zvekamuri yekumisikidza ndezvi: epamusoro electrode, ICP radio frequency unit, RF radio frequency unit, yakaderera electrode system, tembiricha yekudzora system, nezvimwe.

(3) Gasi rekupa hurongwa

Iyo gasi yekugovera sisitimu ndeyekuunza akasiyana etching magasi kune etching chamber, uye nemazvo kudzora gasi kuyerera uye kuyerera kuburikidza nekumanikidza controller (PC) uye mass flow controller (MFC). Iyo gasi yekugovera sisitimu ine gasi sosi bhodhoro, pombi yekutakura gasi, control system, yekusanganisa unit, nezvimwe.

(4) Vacuum System
Pane vacuum system mbiri, imwe yepre{0}vacuum chamber uye imwe ye etching chamber. Pre-vacuum chamber inoburitswa nepombi inogadzirwa. Chete kana iyo vacuum level mupre{4}}vacuum chamber yasvika paukoshi hweseti ndipo panogona kuzovhurwa gonhi rekuti pave newafer. Iyo vacuum mune etching chamber inopiwa ne mechanical pombi uye molecular pump. Iwo magasi anogadzirwa nekuita mukamuri yekumisikidza anoburitswawo neiyo vacuum system.